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NTD3055L104GN-Channel 60 V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
N/A
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ABRmicro #.ABR2045-NTD305-984004
ManufacturerOnsemi
MPN #.NTD3055L104G
Estimated Lead Time-
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DatasheetNTD3055L104(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD30
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 48W (Tj)
RDS(on) Drain-to-Source On Resistance104mOhm @ 6A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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PCN Assembly/Origin
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD3055L104G is an N-Channel MOSFET manufactured by Onsemi, featuring a drain-source voltage of 60 V and a continuous drain current of 12 A when mounted on a suitable heatsink. This surface mount device is encapsulated in a DPAK package, providing a power dissipation of 1.5W when adhering to ambient temperature limits and up to 48W under junction temperature considerations. It exhibits a gate threshold voltage of 2V at 250µA and a total gate charge of 20 nC at 5V. Additionally, it offers an on-resistance of 104mOhm with a drain current of 6A and a gate voltage of 5V, making it suitable for efficient switching applications.
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