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NTD3055-094GN-Channel 60 V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
N/A
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ABRmicro #.ABR2045-NTD305-956212
ManufacturerOnsemi
MPN #.NTD3055-094G
Estimated Lead Time-
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DatasheetNTD3055-094(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD30
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 48W (Tj)
RDS(on) Drain-to-Source On Resistance94mOhm @ 6A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD3055-094G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mounting in a DPAK package. It can handle a maximum voltage of 60 V and a continuous current of up to 12 A under specified conditions. The part has a power dissipation capacity of 1.5 W when measured at ambient temperature (Ta) and 48 W when measured at the junction temperature (Tj). It features a total gate charge of 20 nC at a 10 V gate-source voltage and has a threshold voltage of 4 V at a drain current of 250 µA.
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