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NTD2955T4GP-Channel 60 V 12A (Ta) 55W (Tj) Surface Mount DPAK

1:$1.0080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTD295-1018155
ManufacturerOnsemi
MPN #.NTD2955T4G
Estimated Lead Time35 Weeks
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DatasheetDatasheetNTD,NVD2955(PDF)
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In Stock: 13682
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.0080
Ext. Price$ 1.0080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0080$1.0080
10$0.8280$8.2770
100$0.6430$64.2810
500$0.5460$273.0630
1000$0.4440$444.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTD2955
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation55W (Tj)
RDS(on) Drain-to-Source On Resistance180mOhm @ 6A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD,NVD2955
Environmental Information
Material Declaration NTD2955T4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev 18/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD2955T4G is a P-channel MOSFET manufactured by Onsemi designed for surface mount applications. It is housed in a DPAK package and features a maximum drain-source voltage of 60 V and can handle a continuous current of up to 12 A. The MOSFET is capable of dissipating up to 55 W of power at the junction temperature. Its input capacitance is measured at 750 pF at 25 V, and it has a gate threshold voltage of 4 V with a gate leakage current of 250 µA. Additionally, it is capable of withstanding gate-to-source voltages of ±20 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.