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NTD20N03L27T4GN-Channel 30 V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK

1:$1.3080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTD20N-1012868
ManufacturerOnsemi
MPN #.NTD20N03L27T4G
Estimated Lead Time31 Weeks
SampleGet Free Sample
DatasheetDatasheetNTD20N03L27, NVD20N03L27(PDF)
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In Stock: 2865
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3080
Ext. Price$ 1.3080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3080$1.3080
10$1.0720$10.7210
100$0.8340$83.4060
500$0.7070$353.2810
1000$0.5760$575.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTD20
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1260 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.75W (Ta), 74W (Tc)
RDS(on) Drain-to-Source On Resistance27mOhm @ 10A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD20N03L27, NVD20N03L27
Environmental Information
Material Declaration NTD20N03L27T4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev 14/Mar/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD20N03L27T4G is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications in a DPAK package. It is capable of handling a maximum drain-source voltage of 30V and a continuous drain current of 20A at ambient temperature (Ta), with a total power dissipation of 1.75W at Ta and 74W at case temperature (Tc). The device features a gate threshold voltage range of 4V to 5V, making it suitable for low voltage applications. It has an input capacitance of 1260 pF when measured at 25V and can tolerate gate-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.