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NTD20N03L27-1GN-Channel 30 V 20A (Ta) 1.75W (Ta), 74W (Tc) Through Hole IPAK
N/A
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ABRmicro #.ABR2045-NTD20N-925238
ManufacturerOnsemi
MPN #.NTD20N03L27-1G
Estimated Lead Time-
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DatasheetNTD20N03L27, NVD20N03L27(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD20
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1260 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.75W (Ta), 74W (Tc)
RDS(on) Drain-to-Source On Resistance27mOhm @ 10A, 5V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD20N03L27-1G is an N-channel MOSFET manufactured by Onsemi, specifically designed for efficient switching and amplification tasks. It is rated for a maximum voltage of 30 V and can handle current up to 20A in free air and 74W when mounted on a case. Encased in a through-hole IPAK package, this MOSFET offers a total gate charge of 1260 pF at 25 V. With an RDS(on) resistance of 27mOhm at 10A and 5V, it efficiently minimizes power loss. The device also features a gate-source voltage threshold range of 4V to 5V, which allows for effective operation in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.