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NTD18N06LT4N-Channel 60 V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD18N-928771
ManufacturerOnsemi
MPN #.NTD18N06LT4
Estimated Lead Time-
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DatasheetDatasheetNTD18N06L(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD18
Continuous Drain Current (ID) @ 25°C18A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)675 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.1W (Ta), 55W (Tj)
RDS(on) Drain-to-Source On Resistance65mOhm @ 9A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD18N06L
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 20/Aug/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD18N06LT4 is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with a DPAK package. It can handle a maximum voltage of 60 V and a current of 18A (Ta), with power dissipation ratings of 2.1W at ambient temperature and 55W at junction temperature. The device operates with a threshold voltage of 2V at a current of 250µA and supports a gate-source voltage range of ±15V. This MOSFET is suitable for electronic switching and amplification purposes due to its efficient conduction and low power consumption characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.