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NTD15N06LT4N-Channel 60 V 15A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK
N/A
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ABRmicro #.ABR2045-NTD15N-1037121
ManufacturerOnsemi
MPN #.NTD15N06LT4
Estimated Lead Time-
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DatasheetNTD15N06L(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD15
Continuous Drain Current (ID) @ 25°C15A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 48W (Tj)
RDS(on) Drain-to-Source On Resistance100mOhm @ 7.5A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD15N06LT4 is an N-Channel MOSFET manufactured by Onsemi, designed for use in surface mount applications with a DPAK package. It operates with a maximum voltage of 60 V and can handle a continuous current of 15A at ambient temperature conditions (Ta), with a power dissipation capacity of 1.5W (Ta) and 48W when junction temperature limits are considered (Tj). The MOSFET exhibits a low on-resistance of 100 milliohms when conducting 7.5A at a gate-source voltage of 5V, ensuring efficient performance. It features a gate threshold voltage of 2V at a test current of 250µA and a total gate charge of 20 nanocoulombs when operating at 5V, indicating its capability to switch efficiently and quickly in electronic circuits.
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