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NTD15N06LT4N-Channel 60 V 15A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD15N-1037121
ManufacturerOnsemi
MPN #.NTD15N06LT4
Estimated Lead Time-
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD15
Continuous Drain Current (ID) @ 25°C15A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 48W (Tj)
RDS(on) Drain-to-Source On Resistance100mOhm @ 7.5A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD15N06LT4 is an N-Channel MOSFET manufactured by Onsemi, designed for use in surface mount applications with a DPAK package. It operates with a maximum voltage of 60 V and can handle a continuous current of 15A at ambient temperature conditions (Ta), with a power dissipation capacity of 1.5W (Ta) and 48W when junction temperature limits are considered (Tj). The MOSFET exhibits a low on-resistance of 100 milliohms when conducting 7.5A at a gate-source voltage of 5V, ensuring efficient performance. It features a gate threshold voltage of 2V at a test current of 250µA and a total gate charge of 20 nanocoulombs when operating at 5V, indicating its capability to switch efficiently and quickly in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.