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NTD12N10T4N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD12N-1040385
ManufacturerOnsemi
MPN #.NTD12N10T4
Estimated Lead Time-
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DatasheetDatasheetNTD12N10(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD12
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)550 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.28W (Ta), 56.6W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 6A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD12N10
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 20/Aug/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD12N10T4 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient performance in various electronic applications. It features a 100 V drain-to-source voltage with a continuous current rating of 12A under ambient conditions (Ta) and a power dissipation capability of 1.28W (Ta) and 56.6W (Tc) when mounted on a suitable heat sink. Housed in a surface mount DPAK package, this MOSFET exhibits a low on-state resistance of 165 milliohms at a gate-source voltage of 10V and a drain current of 6A. The device supports gate-source voltages up to ±20V, making it versatile for different switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.