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NTB75N03L09T4GN-Channel 30 V 75A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-NTB75N-1004398
ManufacturerOnsemi
MPN #.NTB75N03L09T4G
Estimated Lead Time-
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DatasheetDatasheetNTB,NTP75N03L09(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTB75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)75 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5635 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 37.5A, 5V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTB,NTP75N03L09
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Mult Dev Material Chg 2/Oct/2018
PCN Obsolescence/ EOL
Multiple Devices 24/Jan/2011
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTB75N03L09T4G is an N-channel enhancement mode field-effect transistor (FET) manufactured by Onsemi. It is designed for high-performance applications requiring low on-resistance and efficient power handling. This component supports a continuous drain current of 75A at a maximum drain-source voltage of 30V. It is housed in a surface-mount D2PAK package, providing excellent thermal performance with a power dissipation capability of up to 125W when mounted on a suitable heat sink. The gate threshold voltage is specified at 2V with a gate charge of 75 nC at 5V. The device also offers robustness against high voltage transient conditions, with a maximum gate-source voltage rating of ±20V.
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