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NTB18N06N-Channel 60 V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-NTB18N-968776
ManufacturerOnsemi
MPN #.NTB18N06
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTB,NTP18N06(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTB18
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48.4W (Tc)
RDS(on) Drain-to-Source On Resistance90mOhm @ 7.5A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTB,NTP18N06
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 03/Apr/2007Multiple Devices 27/Jun/2007
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTB18N06 from Onsemi is an N-Channel MOSFET designed for surface mount applications, specifically utilizing a D2PAK package. It supports a drain-source voltage of 60 V and a current of 15A at the case temperature, with a power dissipation capability of 48.4W at the case temperature. The device exhibits a maximum on-resistance of 90 milliohms at a drain current of 7.5A and a gate-source voltage of 10V. It also features an input capacitance of 450 pF at 25V and a gate threshold voltage of 4V at a drain current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.