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NTB125N02RN-Channel 24 V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 113.6W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-NTB125-952457
ManufacturerOnsemi
MPN #.NTB125N02R
Estimated Lead Time-
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DatasheetDatasheetNTB,NTP125N02R(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTB12
Continuous Drain Current (ID) @ 25°C95A (Ta), 120.5A (Tc)
Drain-to-Source Voltage (VDS)24 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3440 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.98W (Ta), 113.6W (Tc)
RDS(on) Drain-to-Source On Resistance4.6mOhm @ 20A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTB,NTP125N02R
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 30/Jun/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTB125N02R is a surface mount N-channel MOSFET manufactured by Onsemi, designed to handle a voltage rating of 24V. It is capable of delivering a continuous drain current of 95A when measured at ambient temperature (Ta) and 120.5A when measured at case temperature (Tc). This component has a power dissipation capacity of 1.98W at ambient temperature and 113.6W at case temperature. The MOSFET comes in a D2PAK package and features a gate charge of 28 nC at 4.5V, with an input capacitance of 3440 pF at 20V. Its construction allows for efficient thermal management and high performance in power management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.