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NTA7002NT1N-Channel 30 V 154mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416

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ABRmicro #.ABR2045-NTA700-1005304
ManufacturerOnsemi
MPN #.NTA7002NT1
Estimated Lead Time-
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTA70
Continuous Drain Current (ID) @ 25°C154mA (Tj)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)20 pF @ 5 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300mW (Tj)
RDS(on) Drain-to-Source On Resistance7Ohm @ 154mA, 4.5V
Package Type (Mfr.)SC-75, SOT-416
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 100µA
Package / CaseSC-75, SOT-416
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTA7002NT1 is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 30 V and a current of up to 154 mA at junction temperature. It features a power dissipation of 300 mW at junction temperature and is housed in a compact SC-75, SOT-416 package. This MOSFET operates effectively with a gate-source voltage of 1.5V at 100µA and possesses an input capacitance of 20 pF at 5 V. As a metal-oxide semiconductor device, it serves as an efficient electronic switch or amplifier in various electrical circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.