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NSVB114YPDXV6T1GPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

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ABRmicro #.ABR2045-NSVB11-942192
ManufacturerOnsemi
MPN #.NSVB114YPDXV6T1G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetMUN5314DW1, NSBC114YPDxx(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberB114
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
GradeAutomotive
Mounting StyleSurface Mount
Power - Max500mW
QualificationAEC-Q101
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Package Type (Mfr.)SOT-563
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / CaseSOT-563, SOT-666
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MUN5314DW1, NSBC114YPDxx
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)