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NSM21156DW6T1GPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
N/A
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ABRmicro #.ABR2045-NSM211-1000541
ManufacturerOnsemi
MPN #.NSM21156DW6T1G
Estimated Lead Time-
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DatasheetNSM21156DW6T1G(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNSM211
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V / 220 @ 2mA, 5V
Frequency - Transition-
Mounting StyleSurface Mount
Power - Max230mW
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Package Type (Mfr.)SC-88/SC70-6/SOT-363
Transistor Type1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50V, 65V
Package / Case6-TSSOP, SC-88, SOT-363
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)