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NSBA114YDP6T5GPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
N/A
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ABRmicro #.ABR2045-NSBA11-935064
ManufacturerOnsemi
MPN #.NSBA114YDP6T5G
Estimated Lead Time-
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DatasheetMUN5114DW1, NSBA114YDxx(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNSBA114
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Mounting StyleSurface Mount
Power - Max408mW
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Package Type (Mfr.)SOT-963
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / CaseSOT-963
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Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)