ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
NILMS4501NR2N-Channel 24 V 9.5A (Ta) 1.4W (Ta) Surface Mount 4-PLLP (6.2x5.2)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NILMS4-1039469
ManufacturerOnsemi
MPN #.NILMS4501NR2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNILMS4501N(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNILMS45
Continuous Drain Current (ID) @ 25°C9.5A (Ta)
Drain-to-Source Voltage (VDS)24 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET FeatureCurrent Sensing
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 6 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.4W (Ta)
Qualification-
RDS(on) Drain-to-Source On Resistance13mOhm @ 6A, 10V
Package Type (Mfr.)4-PLLP (6.2x5.2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case4-DFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NILMS4501N
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 06/Oct/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NILMS4501NR2 is a high-efficiency, N-Channel MOSFET transistor manufactured by Onsemi. It is designed for surface-mount applications and comes in a compact 4-PLLP package measuring 6.2mm by 5.2mm. The device operates with a voltage rating of 24V and can handle a continuous current of 9.5A under specific conditions. It features a power dissipation capability of 1.4W at the same conditions. This MOSFET is notable for its current sensing capabilities and maintains a low on-state resistance of 13 milliohms when operating at 6A and 10V, indicating its efficiency in minimizing power loss.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.