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NDUL03N150CGN-Channel 1500 V 2.5A (Ta) 3W (Ta), 50W (Tc) Through Hole TO-3P(L)

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ABRmicro #.ABR2045-NDUL03-988756
ManufacturerOnsemi
MPN #.NDUL03N150CG
Estimated Lead Time-
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In Stock: 12
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNDUL03
Continuous Drain Current (ID) @ 25°C2.5A (Ta)
Drain-to-Source Voltage (VDS)1500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)650 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance10.5Ohm @ 1.25A, 10V
Package Type (Mfr.)TO-3P(L)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-3PL
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDUL03N150CG by Onsemi is an N-Channel MOSFET designed for high-voltage applications, capable of handling up to 1500 volts. It can carry a current of 2.5 amperes under ambient conditions (Ta), with a power dissipation of 3 watts, and can handle 50 watts when mounted on a case (Tc). This component is housed in a TO-3P(L) package, suitable for through-hole mounting. It features a gate threshold voltage of 10 volts, with a maximum gate-to-source voltage tolerance of ±30 volts. The device has an on-state resistance of 10.5 ohms when conducting a current of 1.25 amperes with a gate-source voltage of 10 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.