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NDT01N60T1GN-Channel 600 V 400mA (Tc) 2.5W (Tc) Surface Mount SOT-223 (TO-261)
N/A
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ABRmicro #.ABR2045-NDT01N-953291
ManufacturerOnsemi
MPN #.NDT01N60T1G
Estimated Lead Time-
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DatasheetNDD01N60, NDT01N60(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNDT01
Continuous Drain Current (ID) @ 25°C400mA (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)160 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance8.5Ohm @ 200mA, 10V
Package Type (Mfr.)SOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 50µA
Package / CaseTO-261-4, TO-261AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDT01N60T1G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with its SOT-223 (TO-261) package. It can handle a maximum voltage of 600 V and a current of 400 mA when its case temperature is at specified conditions. The device features a power dissipation capability of 2.5 W at its case. It requires a gate-source voltage of 3.7 V to conduct 50 µA and can fully operate with a gate-source voltage of 10 V. Additionally, it has an input capacitance of 160 pF when a 25 V signal is applied, making it suitable for various switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.