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NDS9400AP-Channel 30 V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N/A
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ABRmicro #.ABR2045-NDS940-987803
ManufacturerOnsemi
MPN #.NDS9400A
Estimated Lead Time-
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DatasheetNDS9400A(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNDS940
Continuous Drain Current (ID) @ 25°C3.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance130mOhm @ 1A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDS9400A, manufactured by Onsemi, is a P-Channel MOSFET designed for surface mount applications, encapsulated in an 8-SOIC package. It operates with a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 3.4A. This MOSFET features a low on-resistance of 130mOhm when driven at 1A and 10V, allowing for efficient power management. Additionally, it is capable of withstanding gate-source voltages up to ±20V and possesses a power dissipation rating of 2.5W when mounted on a suitable surface to manage thermal conditions effectively.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.