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NDS352PP-Channel 20 V 850mA (Ta) 500mW (Ta) Surface Mount SOT-23-3

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ABRmicro #.ABR2045-NDS352-1030604
ManufacturerOnsemi
MPN #.NDS352P
Estimated Lead Time-
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DatasheetDatasheetNDS352P(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberNDS352
Continuous Drain Current (ID) @ 25°C850mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)125 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance350mOhm @ 1A, 10V
Package Type (Mfr.)SOT-23-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Extended Links
Datasheets
NDS352P
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NDS352P is a P-Channel MOSFET manufactured by Onsemi designed for surface mount applications, encapsulated in a SOT-23-3 package. It is rated for a drain-source voltage of 20V and a continuous drain current of 850mA when measured at a specific ambient temperature (Ta). The power dissipation is listed as 500mW under similar conditions. The MOSFET operates with a gate-source voltage of up to ±12V and demonstrates a gate threshold voltage of 2.5V at a gate current of 250µA. This part offers reliable performance for low voltage switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.