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NDS352APP-Channel 30 V 900mA (Ta) 500mW (Ta) Surface Mount SOT-23-3

1:$0.3680

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NDS352-1040239
ManufacturerOnsemi
MPN #.NDS352AP
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetNDS352AP(PDF)
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In Stock: 9797
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3680
Ext. Price$ 0.3680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3680$0.3680
10$0.3160$3.1560
100$0.2190$21.8880
500$0.1720$86.0630
1000$0.1390$139.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNDS352
Continuous Drain Current (ID) @ 25°C900mA (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)135 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance300mOhm @ 1A, 10V
Package Type (Mfr.)SOT-23-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDS352AP
Environmental Information
Material Declaration NDS352APonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly Chgs 12/Jul/2020
PCN Design/Specification
Standard Marking Lay-out 10/Oct/2022Standard Marking Lay-out 16/Nov/2021
PCN Packaging
Binary Year Code Marking 15/Jan/2014Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NDS352AP is a P-Channel MOSFET manufactured by Onsemi, designed for surface-mount applications in a compact SOT-23-3 package. It is capable of handling a maximum voltage of 30V and a current of up to 900mA when the ambient temperature is considered (Ta). This MOSFET is efficient with a power dissipation specification of 500mW under similar conditions. It features gate-source voltage tolerances of 4.5V to 10V and has an absolute maximum gate-source voltage of ±20V. The device also has an input capacitance of 135 pF at a 15 V drain-source voltage.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.