NDH8447 Onsemi

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NDH8447P-Channel 30 V 4.4A (Ta) Surface Mount SuperSOT™-8

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ABRmicro #.ABR2045-NDH844-944354

ManufacturerOnsemi

MPN #.NDH8447

Estimated Lead Time-

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Datasheet

NDH8447(PDF)

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In Stock: 16

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Packaging

Tape & Reel (TR)Cut Tape (CT)

Shipping DateNovember 16, 2024

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Technical Specifications

Series-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Lifecycle StatusObsolete

Base Product NumberNDH844

Continuous Drain Current (ID) @ 25°C4.4A (Ta)

Drain-to-Source Voltage (VDS)30 V

FET Feature-

FET TypeP-Channel

Gate Charge Total (Qg)(Max.)30 nC @ 10 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)670 pF @ 15 V

Mfronsemi

Mounting StyleSurface Mount

RDS(on) Drain-to-Source On Resistance53mOhm @ 4.4A, 10V

Package Type (Mfr.)SuperSOT™-8

TechnologyMOSFET (Metal Oxide)

VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA

Package / Case8-LSOP (0.130", 3.30mm Width)

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Extended Links

Datasheets

NDH8447

Environmental Information

onsemi REACH onsemi RoHS

Environmental & Export Classifications

RoHS ComplianceNot RoHS compliant and cannot enter the EU market

MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging

REACH RegulationNo SVHCs Present

US ECCNEAR99

HTSUS8541.29.0095 (Other; No import duty applies)

Additional Details

The NDH8447 by Onsemi is a P-Channel MOSFET designed for efficient switching applications. It is housed in a compact SuperSOT™-8 surface mount package, providing a maximum voltage rating of 30V and a current capacity of 4.4A. This component exhibits a low on-resistance of 53mOhms at 4.4A and 10V, ensuring reduced power loss during operation. It features a gate threshold voltage of 3V at 250µA and a total gate charge capacitance of 670 pF at 15V, making it suitable for high-speed switching with minimal lead inductance.

This information is sourced from the Internet, hasn't been reviewed, and may contain errors.