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NDH8436N-Channel 30 V 5.8A (Ta) Surface Mount SuperSOT™-8

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ABRmicro #.ABR2045-NDH843-997271
ManufacturerOnsemi
MPN #.NDH8436
Estimated Lead Time-
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DatasheetDatasheetNDH8436(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNDH843
Continuous Drain Current (ID) @ 25°C5.8A (Ta)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)560 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance30mOhm @ 5.8A, 10V
Package Type (Mfr.)SuperSOT™-8
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 250µA
Package / Case8-LSOP (0.130", 3.30mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDH8436
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDH8436 is a semiconductor component manufactured by Onsemi, designed as an N-Channel MOSFET with a voltage rating of 30V and a current carrying capacity of 5.8A at the ambient temperature. It comes in a compact SuperSOT™-8 surface mount package, making it suitable for space-constrained circuit board designs. The part features a gate charge of 30 nC at 10 V, a capacitance of 560 pF at 15 V, and a threshold voltage of 2.8V at 250µA. These specifications highlight its electrical efficiency and suitability for high-speed switching applications within its operating limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.