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NDF08N60ZGN-Channel 600 V 8.4A (Tc) 36W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-NDF08N-1034970
ManufacturerOnsemi
MPN #.NDF08N60ZG
Estimated Lead Time-
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In Stock: 13
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNDF08
Continuous Drain Current (ID) @ 25°C8.4A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1140 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation36W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3 Full Pack
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDF08N60ZG is a power MOSFET manufactured by Onsemi, featuring an N-channel configuration. It is designed to handle a maximum voltage of 600V and a current of 8.4A when measured at the case (Tc). This component can dissipate up to 36W of power under specified conditions and is housed in a TO-220FP through-hole package, which provides insulation. The device offers a gate charge of 39 nC at 10 V, and a gate-source voltage rating of ±30V, making it suitable for high-speed switching applications in its class.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.