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NDD60N900U1T4GN-Channel 600 V 5.7A (Tc) 74W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NDD60N-911019
ManufacturerOnsemi
MPN #.NDD60N900U1T4G
Estimated Lead Time-
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DatasheetDatasheetNDD60N900U1(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 10, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNDD60
Continuous Drain Current (ID) @ 25°C5.7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)360 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation74W (Tc)
RDS(on) Drain-to-Source On Resistance900mOhm @ 2.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDD60N900U1
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Devices 29/Aug/2017
PCN Design/Specification
NDD60NYYY 25/Jan/2017
PCN Obsolescence/ EOL
Mult Devices 01/Sep/2017
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)