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NDD60N360U1-35GN-Channel 600 V 11A (Tc) 114W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NDD60N-1002036
ManufacturerOnsemi
MPN #.NDD60N360U1-35G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNDD60N360U1(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNDD60
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 50 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation114W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDD60N360U1
Environmental Information
onsemi RoHS
PCN Design/Specification
NDD60NYYY 25/Jan/2017
PCN Obsolescence/ EOL
Mult Devices 01/Sep/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi part NDD60N360U1-35G is an N-channel MOSFET designed for high-voltage applications, with a maximum drain-source voltage of 600 V and a continuous drain current of 11 A under specified conditions (Tc). It features a power dissipation rate of 114 W at Tc and is housed in a standard Through Hole IPAK package, facilitating easy mounting on circuit boards. The MOSFET exhibits a gate threshold voltage of 4V at a gate current of 250µA and demonstrates a drain-source on-state resistance of 360 mOhm when operated at 5.5 A and a gate-source voltage of 10V. These characteristics make it suitable for switching and amplification in power electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.