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NDD60N360U1-1GN-Channel 600 V 11A (Tc) 114W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NDD60N-939269
ManufacturerOnsemi
MPN #.NDD60N360U1-1G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNDD60N360U1(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNDD60
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 50 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation114W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDD60N360U1
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Mult Devices 01/Sep/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDD60N360U1-1G is an N-channel MOSFET manufactured by Onsemi, designed for applications requiring high voltage and current handling capabilities. It operates at a voltage rating of 600 V and can handle a continuous current of 11A when appropriately heat-sinked. The device features a maximum power dissipation of 114W under specific conditions. It offers an on-resistance of 360mOhm when conducting 5.5A at a gate-source voltage of 10V. The input capacitance is measured at 790 pF when subjected to a 50 V testing condition. The MOSFET has a rugged design accommodating gate-source voltages up to ±25V and is provided in a Through Hole IPAK package conducive to easy mounting and installation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.