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NDD03N50ZT4GN-Channel 500 V 2.6A (Tc) 58W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NDD03N-926279
ManufacturerOnsemi
MPN #.NDD03N50ZT4G
Estimated Lead Time-
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DatasheetDatasheetNDD03N50Z(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberNDD03
Continuous Drain Current (ID) @ 25°C2.6A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)329 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation58W (Tc)
RDS(on) Drain-to-Source On Resistance3.3Ohm @ 1.15A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDD03N50Z
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualification Assembly Test Site 20/Feb/2014
PCN Obsolescence/ EOL
Multiple Devices 24/Jul/2015
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDD03N50ZT4G is a semiconductor component manufactured by Onsemi, designed as an N-Channel MOSFET with a maximum voltage rating of 500 volts and a current rating of 2.6A when measured at the case temperature. It is capable of dissipating up to 58 watts under similar conditions. This device is housed in a DPAK surface mount package, making it suitable for compact and efficient circuit designs. It features a threshold voltage of 4.5 volts at 50 microamperes and exhibits a total gate charge of 16 nanocoulombs at a gate-source voltage of 10 volts. The MOSFET is designed to effectively manage electronic switching and amplification tasks within its operational ratings.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.