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NDD01N60-1GN-Channel 600 V 1.5A (Tc) 46W (Tc) Through Hole IPAK
N/A
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ABRmicro #.ABR2045-NDD01N-1001247
ManufacturerOnsemi
MPN #.NDD01N60-1G
Estimated Lead Time-
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DatasheetNDD01N60, NDT01N60(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNDD01
Continuous Drain Current (ID) @ 25°C1.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)160 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation46W (Tc)
RDS(on) Drain-to-Source On Resistance8.5Ohm @ 200mA, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 50µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDD01N60-1G is a semiconductor device manufactured by Onsemi, featuring an N-channel configuration. It is designed to handle a maximum voltage of 600 V and a continuous current of 1.5 A at the case temperature (Tc). The device offers a power dissipation capability of up to 46 W at Tc. Additionally, this component comes in a through-hole IPAK package, making it suitable for mounting on printed circuit boards. It operates with a gate-source voltage of 10 V and has a gate charge of 7.2 nC at 10 V, with a gate threshold voltage tolerance of ±30 V.
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