ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
NDBA100N10BT4HN-Channel 100 V 100A (Ta) 110W (Tc) Surface Mount TO-263 (D2PAK)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NDBA10-1037450
ManufacturerOnsemi
MPN #.NDBA100N10BT4H
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNDBA100N10B(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNDBA10
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V, 15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2950 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 50A, 15V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NDBA100N10B
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Devices 28/Apr/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NDBA100N10BT4H is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management and switching applications. It features a maximum voltage rating of 100 V and a current handling capacity of 100A at ambient temperatures. The device can dissipate power up to 110W when appropriately mounted. Encased in a TO-263 (D2PAK) surface mount package, it is characterized by a low on-resistance of 6.9mOhm at 15V gate drive and 50A drain current, making it suitable for handling high power with reduced losses. Additionally, it exhibits an input capacitance of 2950 pF at 50 V, which suggests its capability in high-frequency applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.