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MTW32N20EN-Channel 200 V 32A (Tc) 180W (Tc) Through Hole TO-247
N/A
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ABRmicro #.ABR2045-MTW32N-1038229
ManufacturerOnsemi
MPN #.MTW32N20E
Estimated Lead Time-
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DatasheetMTW32N20E(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberMTW32
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 16A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The MTW32N20E by Onsemi is an N-channel MOSFET designed for high-power applications, offering a drain-source voltage rating of 200 V and a continuous drain current of 32A. Encased in a TO-247 package, it is suitable for through-hole mounting. The device's on-resistance is specified at 75 milliohms when tested with a drain current of 16A and a gate-source voltage of 10V. It can handle power dissipation up to 180W with a maximum gate-source voltage of ±20V. This MOSFET is built to efficiently manage significant power loads while maintaining thermal stability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.