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MTP10N10ELGN-Channel 100 V 10A (Tc) 1.75W (Ta), 40W (Tc) Through Hole TO-220
N/A
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ABRmicro #.ABR2045-MTP10N-997886
ManufacturerOnsemi
MPN #.MTP10N10ELG
Estimated Lead Time-
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DatasheetMTP10N10EL(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberMTP10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1040 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.75W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 5A, 5V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The MTP10N10ELG by Onsemi is an N-Channel MOSFET designed for efficiency in power management. It features a maximum voltage rating of 100V and can handle currents up to 10A when adequately heat-sinked (Tc). The device operates effectively in through-hole applications with a notable power dissipation of up to 40W at the case (Tc) and 1.75W in an ambient environment (Ta). It supports a gate threshold voltage of ±15V and requires a gate drive of 2V at 250μA. Packaged in a TO-220 case, this MOSFET is suited for various applications requiring reliable power handling and switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.