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MPSA70RLRMBipolar (BJT) Transistor PNP 40 V 100 mA 125MHz 625 mW Through Hole TO-92 (TO-226)

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ABRmicro #.ABR2045-MPSA70-910486
ManufacturerOnsemi
MPN #.MPSA70RLRM
Estimated Lead Time-
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DatasheetDatasheetMPSA70(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Box (TB)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberMPSA70
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5mA, 10V
Frequency - Transition125MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92 (TO-226)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MPSA70
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 30/Jun/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)