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MMUN2212LT1Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

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ABRmicro #.ABR2045-MMUN22-943420
ManufacturerOnsemi
MPN #.MMUN2212LT1
Estimated Lead Time-
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DatasheetDatasheetMMUN22xxLTx Series(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberMMUN2212
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Grade-
Mounting StyleSurface Mount
Power - Max246 mW
Qualification-
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
Package Type (Mfr.)SOT-23-3 (TO-236)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MMUN22xxLTx Series
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 30/Jun/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)