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MMBF170LT3N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)

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ABRmicro #.ABR2045-MMBF17-1025360
ManufacturerOnsemi
MPN #.MMBF170LT3
Estimated Lead Time-
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberMMBF17
Continuous Drain Current (ID) @ 25°C500mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)60 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation225mW (Ta)
RDS(on) Drain-to-Source On Resistance5Ohm @ 200mA, 10V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The MMBF170LT3 is an N-channel MOSFET manufactured by Onsemi, designed for surface-mount applications in a SOT-23-3 package. This MOSFET supports a drain-source voltage of up to 60V and can handle a continuous current of 500mA at Ta. It provides a power dissipation capacity of 225mW. With an on-resistance of 5 ohms at 200mA and 10V, it ensures efficient operation, complemented by an input capacitance of 60 pF at 10V, making it suitable for various electronic circuit designs where compact size and moderate power handling are required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.