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MCH6436-TL-EN-Channel 30 V 6A (Ta) 1.5W (Ta) Surface Mount 6-MCPH
N/A
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ABRmicro #.ABR2045-MCH643-990461
ManufacturerOnsemi
MPN #.MCH6436-TL-E
Estimated Lead Time-
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DatasheetMCH6436(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberMCH64
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)710 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
RDS(on) Drain-to-Source On Resistance34mOhm @ 3A, 4.5V
Package Type (Mfr.)6-MCPH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case6-SMD, Flat Leads
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PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The MCH6436-TL-E is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications with a 6-MCPH package. It operates at a maximum voltage of 30 V and can handle a continuous current of up to 6A, with a power dissipation of 1.5W under specific conditions. The device features a gate charge of 7.5 nC at 4.5 V and an input capacitance of 710 pF at 10 V, making it suitable for efficient switching applications. Its compact package and specifications support its use in various electronic circuits requiring reliable semiconductor performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.