MCH6331-TL-E Onsemi

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MCH6331-TL-EP-Channel 30 V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH

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ABRmicro #.ABR2045-MCH633-939662

ManufacturerOnsemi

MPN #.MCH6331-TL-E

Estimated Lead Time-

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Datasheet

MCH6331(PDF)

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In Stock: 12

Shipped From Shenzhen or Hong Kong Warehouses

Min.&Mult.1

Packaging

Tape & Reel (TR)

Shipping DateNovember 15, 2024

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Technical Specifications

Series-

Packaging

Tape & Reel (TR)

Lifecycle StatusObsolete

Base Product NumberMCH63

Continuous Drain Current (ID) @ 25°C3.5A (Ta)

Drain-to-Source Voltage (VDS)30 V

Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V

FET Feature-

FET TypeP-Channel

Gate Charge Total (Qg)(Max.)5 nC @ 10 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 10 V

Mfronsemi

Mounting StyleSurface Mount

Operating Temperature150°C (TJ)

Maximum Power Dissipation1.5W (Ta)

RDS(on) Drain-to-Source On Resistance98mOhm @ 1.5A, 10V

Package Type (Mfr.)6-MCPH

TechnologyMOSFET (Metal Oxide)

Gate-to-Source Voltage (Vɢs)±20V

VGS(th) Gate-to-Source Threshold Voltage (Max.)-

Package / Case6-SMD, Flat Leads

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Datasheets

MCH6331

Environmental Information

onsemi RoHS

Environmental & Export Classifications

MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging

REACH RegulationNo SVHCs Present

US ECCNEAR99

HTSUS8541.29.0095 (Other; No import duty applies)

Additional Details

The MCH6331-TL-E is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a 6-MCPH package. It supports a maximum voltage of 30 V and a current capacity of 3.5 A under typical conditions. With a power dissipation of 1.5 W, it features a low on-resistance of 98 milliohms when operating at 1.5 A and 10 V, enhancing efficiency. The device also exhibits a total gate charge of 5 nanocoulombs and a capacitance of 250 pF at 10 V, characteristics that contribute to its performance in switching applications.

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