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MCH3481-TL-WN-Channel 20 V 2A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3

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ABRmicro #.ABR2045-MCH348-965987
ManufacturerOnsemi
MPN #.MCH3481-TL-W
Estimated Lead Time-
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DatasheetDatasheetMCH3481(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberMCH3481
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2.9 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)175 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
RDS(on) Drain-to-Source On Resistance104mOhm @ 1A, 4.5V
Package Type (Mfr.)SC-70FL/MCPH3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±9V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 1mA
Package / Case3-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MCH3481
Environmental Information
Material Declaration MCH3481-TL-Wonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 7/Apr/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The MCH3481-TL-W is a surface mount N-Channel MOSFET produced by Onsemi. It features a 20 V voltage rating and can handle a continuous current of up to 2A, with a power dissipation capacity of 800mW. The device has a compact SC-70FL/MCPH3 package, making it suitable for high-density circuit designs. Its electrical characteristics include a drain-source on-state resistance of 104mOhm at a gate-source voltage of 4.5V and a current of 1A, and a drain-source voltage drop of 900mV at a 1mA current. The MOSFET is also characterized by a gate-source voltage handling capability of ±9V.
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