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MCH3421-TL-EN-Channel 100 V 800mA (Ta) 900mW (Ta) Surface Mount 3-MCPH
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ABRmicro #.ABR2045-MCH342-1003020
ManufacturerOnsemi
MPN #.MCH3421-TL-E
Estimated Lead Time-
SampleGet Free Sample
DatasheetMCH3421-TL-E(PDF)
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C800mA (Ta)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)165 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance890mOhm @ 400mA, 10V
Package Type (Mfr.)3-MCPH
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case3-SMD, Flat Leads
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The MCH3421-TL-E is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power switching and amplification in surface mount applications. It offers a maximum drain-source voltage of 100 V and can handle a continuous drain current of 800 mA under ambient conditions. The device features a compact 3-MCPH package, allowing for space-efficient circuit designs. It supports a power dissipation of 900 mW and has a gate charge of 4.8 nC at 10 V, demonstrating its suitability for rapid and efficient switching operations. Additionally, it presents a drain-source on-state resistance of 890 mOhm at 400 mA and 10V, contributing to its performance in minimizing power losses. The MOSFET also has an input capacitance of 165 pF at 20 V, illustrating its capability to handle varying load requirements.
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