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KSD401YBipolar (BJT) Transistor NPN 150 V 2 A 5MHz 25 W Through Hole TO-220-3

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ABRmicro #.ABR2045-KSD401-903576
ManufacturerOnsemi
MPN #.KSD401Y
Estimated Lead Time-
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DatasheetDatasheetKSD401(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberKSD401
Collector Current (Iᴄ)@25°C2 A
Collector Cut-off Current (Iᴄᴇs)(Max.)50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 400mA, 10V
Frequency - Transition5MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max25 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)150 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
KSD401
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Lead Frame Dimensions 29/Nov/2007
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)