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KSB1149YSBipolar (BJT) Transistor PNP - Darlington 100 V 3 A 1.3 W Through Hole TO-126-3

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ABRmicro #.ABR2045-KSB114-904810
ManufacturerOnsemi
MPN #.KSB1149YS
Estimated Lead Time-
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DatasheetDatasheetKSB1149(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberKSB11
Collector Current (Iᴄ)@25°C3 A
Collector Cut-off Current (Iᴄᴇs)(Max.)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1.5A, 2V
Frequency - Transition-
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max1.3 W
Package Type (Mfr.)TO-126-3
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic1.2V @ 1.5mA, 1.5A
Collector-Emitter Breakdown Voltage (Max.)100 V
Package / CaseTO-225AA, TO-126-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
KSB1149
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)