The IRLS640A, manufactured by Onsemi, is an N-Channel power MOSFET designed for efficiency and reliability in various electronic applications. It features a maximum drain-source voltage of 200 V and a continuous drain current of 9.8A when the case is at the rated temperature. This device is capable of dissipating up to 40 watts of power under specified conditions. Housed in a TO-220F-3 package, it offers compact and efficient performance. Key electrical characteristics include a gate threshold voltage of 2 volts at a gate current of 250µA, a total gate charge of 56 nanocoulombs at 5 volts, and an input capacitance of 1705 picofarads at 25 volts, enabling effective switching behavior.