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IRLR210ATFN-Channel 200 V 2.7A (Tc) 2.5W (Ta), 21W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-IRLR21-1013409
ManufacturerOnsemi
MPN #.IRLR210ATF
Estimated Lead Time-
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRLR21
Continuous Drain Current (ID) @ 25°C2.7A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)240 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 21W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 1.35A, 5V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR210ATF is a surface mount N-channel MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 200 V and can conduct a continuous current of 2.7 A when mounted on a suitable heat sink with a power dissipation capability of 21 W. For direct applications without additional cooling, it can dissipate up to 2.5 W of power. The MOSFET features a low on-resistance of 1.5 ohms at a current of 1.35 A and a gate-source voltage of 5 V. Packaged in a TO-252AA configuration, it provides a compact and efficient solution for switching and amplification tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.