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IRL530AN-Channel 100 V 14A (Tc) 62W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-IRL530-961543
ManufacturerOnsemi
MPN #.IRL530A
Estimated Lead Time-
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DatasheetIRL530A(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRL53
Continuous Drain Current (ID) @ 25°C14A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)755 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation62W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 7A, 5V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL530A, manufactured by Onsemi, is an N-channel MOSFET designed for efficient power handling. It features a drain-to-source voltage rating of 100V and a continuous drain current of 14A at a standardized case temperature. This MOSFET, housed in a TO-220 package, offers a thermal dissipation capability of 62W. With a threshold voltage of 2V at a test current of 250µA and a gate-source voltage rating of 5V, it suits applications requiring robust switching performance. Its through-hole design facilitates easy mounting and integration into various electronic circuits.
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