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IRFU120ATUN-Channel 100 V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-IRFU12-1014628
ManufacturerOnsemi
MPN #.IRFU120ATU
Estimated Lead Time-
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DatasheetDatasheetIRF(R,U)120A(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFU1
Continuous Drain Current (ID) @ 25°C8.4A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)480 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 32W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 4.2A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Extended Links
Datasheets
IRF(R,U)120A
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU120ATU is a N-Channel MOSFET manufactured by Onsemi. It is designed to support a maximum voltage of 100V and a continuous current of 8.4A when mounted to a case (Tc), with power dissipation capabilities of 2.5W in free air (Ta) and 32W when mounted to a case (Tc). The component is encapsulated in a Through Hole IPAK package. It features a gate threshold voltage of 10V and has a gate charge of 480 pF at 25 V. The MOSFET also has a gate-to-source voltage tolerance of ±20V, making it suitable for various electronic applications requiring efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.