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IRF630B_FP001N-Channel 200 V 9A (Tc) 72W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-IRF630-996638
ManufacturerOnsemi
MPN #.IRF630B_FP001
Estimated Lead Time-
SampleGet Free Sample
DatasheetIRF630B, IRFS630B(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF63
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)720 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF630B_FP001 is a power MOSFET manufactured by Onsemi, designed for efficient switching applications. This N-channel MOSFET operates with a voltage rating of 200V and can handle a continuous current of up to 9A under specified conditions. It comes in a TO-220-3 through-hole package, which allows for effective heat dissipation with a maximum power dissipation of 72W at case temperature. The device features a gate charge of 720 pF at 25V and an on-state resistance of 400mOhms when conducting a current of 4.5A at a gate-source voltage of 10V. These characteristics make it suitable for tasks requiring reliable performance in managing higher voltages and currents.
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