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IRF630B_FP001N-Channel 200 V 9A (Tc) 72W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IRF630-996638
ManufacturerOnsemi
MPN #.IRF630B_FP001
Estimated Lead Time-
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In Stock: 19
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF63
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)720 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental Information
Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF630B_FP001 is a power MOSFET manufactured by Onsemi, designed for efficient switching applications. This N-channel MOSFET operates with a voltage rating of 200V and can handle a continuous current of up to 9A under specified conditions. It comes in a TO-220-3 through-hole package, which allows for effective heat dissipation with a maximum power dissipation of 72W at case temperature. The device features a gate charge of 720 pF at 25V and an on-state resistance of 400mOhms when conducting a current of 4.5A at a gate-source voltage of 10V. These characteristics make it suitable for tasks requiring reliable performance in managing higher voltages and currents.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.