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IRF530N_R4942N-Channel 100 V 22A (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IRF530-953347
ManufacturerOnsemi
MPN #.IRF530N_R4942
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRF530N(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF53
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
RDS(on) Drain-to-Source On Resistance64mOhm @ 22A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
IRF530N
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)