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HUFA76429P3N-Channel 60 V 47A (Tc) 110W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-HUFA76-990821
ManufacturerOnsemi
MPN #.HUFA76429P3
Estimated Lead Time-
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DatasheetHUFA76429P3/S3S(PDF)
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA76
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1480 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance22mOhm @ 47A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76429P3 by Onsemi is an N-Channel MOSFET designed for use in various electronic circuits. It features a 60 V breakdown voltage and can handle a continuous current of 47A at a specified case temperature. The device is capable of dissipating up to 110W of power, making it suitable for high-power applications. Encased in a TO-220-3 package, it supports through-hole mounting, which is advantageous for certain assembly processes. The MOSFET also has a total gate charge of 46 nC at 10 V, capable of operating efficiently with gate-source voltages of 4.5V or 10V.
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