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HUFA76423P3N-Channel 60 V 35A (Tc) 85W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-HUFA76-979682
ManufacturerOnsemi
MPN #.HUFA76423P3
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA76
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1060 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 35A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76423P3 from Onsemi is an N-Channel MOSFET designed for efficient power management. It operates with a drain-source voltage of 60 V and can handle a continuous drain current of up to 35A at the case temperature (Tc), with a maximum power dissipation of 85W. The device is housed in a TO-220-3 through-hole package, making it suitable for various electronic designs requiring stable connectivity. It features a gate-source voltage rating of ±16V and exhibits a low on-resistance of 30 milliohms at 35A and 10V. This MOSFET supports gate threshold voltages of 4.5V and 10V, ensuring reliable switching performance in suitable circuit configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.