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HUFA76423P3N-Channel 60 V 35A (Tc) 85W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-HUFA76-979682
ManufacturerOnsemi
MPN #.HUFA76423P3
Estimated Lead Time-
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DatasheetHUFA76423P3,S3S(PDF)
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberHUFA76
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1060 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 35A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76423P3 from Onsemi is an N-Channel MOSFET designed for efficient power management. It operates with a drain-source voltage of 60 V and can handle a continuous drain current of up to 35A at the case temperature (Tc), with a maximum power dissipation of 85W. The device is housed in a TO-220-3 through-hole package, making it suitable for various electronic designs requiring stable connectivity. It features a gate-source voltage rating of ±16V and exhibits a low on-resistance of 30 milliohms at 35A and 10V. This MOSFET supports gate threshold voltages of 4.5V and 10V, ensuring reliable switching performance in suitable circuit configurations.
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