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HUFA76419D3STN-Channel 60 V 20A (Tc) 75W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-HUFA76-1019258
ManufacturerOnsemi
MPN #.HUFA76419D3ST
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetHUFA76419D3, HUFA76419D3S(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberHUFA76419
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance37mOhm @ 20A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
HUFA76419D3, HUFA76419D3S
Environmental Information
Material Declaration HUFA76419D3STonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev A/T 18/Aug/2021
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HUFA76419D3ST is a surface-mount N-Channel MOSFET manufactured by Onsemi, featuring a maximum drain-source voltage of 60V and a continuous current of up to 20A at a case temperature (Tc) of 25°C. It is capable of handling up to 75W of power, also at Tc, making it suitable for significant power management tasks. The device is housed in a TO-252AA package and exhibits a total gate charge of 900 pF at a gate-source voltage of 25V, with threshold voltages marked at 4.5V and 10V. Its design is emphasized on metal-oxide semiconductor technology, allowing for efficient switching and power control in compact electronic configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.